View SST25VF080B07_1087181.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

8 Mbit SPI Serial Flash
SST25VF080B
SST25VF080B8Mb Serial Peripheral Interface (SPI) flash memory
Data Sheet
FEATURES:
* Single Voltage Read and Write Operations - 2.7-3.6V * Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3 * High Speed Clock Frequency - 50 MHz - 66 MHz conditional (see Table 12) * Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention * Low Power Consumption: - Active Read Current: 10 mA (typical) - Standby Current: 5 A (typical) * Flexible Erase Capability - Uniform 4 KByte sectors - Uniform 32 KByte overlay blocks - Uniform 64 KByte overlay blocks * Fast Erase and Byte-Program: - Chip-Erase Time: 35 ms (typical) - Sector-/Block-Erase Time: 18 ms (typical) - Byte-Program Time: 7 s (typical) * Auto Address Increment (AAI) Programming - Decrease total chip programming time over Byte-Program operations * End-of-Write Detection - Software polling the BUSY bit in Status Register - Busy Status readout on SO pin in AAI Mode * Hold Pin (HOLD#) - Suspends a serial sequence to the memory without deselecting the device * Write Protection (WP#) - Enables/Disables the Lock-Down function of the status register * Software Write Protection - Write protection through Block-Protection bits in status register * Temperature Range - Commercial: 0C to +70C - Industrial: -40C to +85C * Packages Available - 8-lead SOIC (200 mils) - 8-contact WSON (6mm x 5mm) * All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
SST's 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF080B devices are enhanced with improved operating frequency and even lower power consumption than the original SST25VFxxxA devices. SST25VF080B SPI serial flash memories are manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF080B devices significantly improve performance and reliability, while lowering power consumption. The devices write (Program or Erase) with a single power supply of 2.7-3.6V for SST25VF080B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF080B device is offered in both 8-lead SOIC (200 mils) and 8-contact WSON (6mm x 5mm) packages. See Figure 2 for pin assignments.
(c)2007 Silicon Storage Technology, Inc. S71296-02-000 06/07 1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice.
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet
Address Buffers and Latches
X - Decoder
SuperFlash Memory
Y - Decoder
Control Logic
I/O Buffers and Data Latches
Serial Interface
1296 B1.0
CE#
SCK
SI
SO
WP#
HOLD#
FIGURE 1: Functional Block Diagram
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
2
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet
PIN DESCRIPTION
CE# SO WP# VSS
1 2
8 7
VDD HOLD# SCK SI
CE# SO WP# VSS
1
8
VDD HOLD# SCK SI
2
7
Top View
3 4 6 5
1296 08-soic S2A P1.0 3
Top View
6
4
5 1296 08-wson QA P2.0
8-LEAD SOIC FIGURE 2: Pin Assignments TABLE 1: Pin Description
Symbol SCK Pin Name Serial Clock Functions
8-CONTACT WSON
To provide the timing of the serial interface. Commands, addresses, or input data are latched on the rising edge of the clock input, while output data is shifted out on the falling edge of the clock input. To transfer commands, addresses, or data serially into the device. Inputs are latched on the rising edge of the serial clock. To transfer data serially out of the device. Data is shifted out on the falling edge of the serial clock. Outputs Flash busy status during AAI Programming when reconfigured as RY/BY# pin. See "Hardware End-of-Write Detection" on page 12 for details. The device is enabled by a high to low transition on CE#. CE# must remain low for the duration of any command sequence. The Write Protect (WP#) pin is used to enable/disable BPL bit in the status register. To temporarily stop serial communication with SPI flash memory without resetting the device. To provide power supply voltage: 2.7-3.6V for SST25VF080B
T1.0 1296
SI SO
Serial Data Input Serial Data Output
CE# WP# HOLD# VDD VSS
Chip Enable Write Protect Hold Power Supply Ground
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
3
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet
MEMORY ORGANIZATION
The SST25VF080B SuperFlash memory array is organized in uniform 4 KByte erasable sectors with 32 KByte overlay blocks and 64 KByte overlay erasable blocks.
select the device, and data is accessed through the Serial Data Input (SI), Serial Data Output (SO), and Serial Clock (SCK). The SST25VF080B supports both Mode 0 (0,0) and Mode 3 (1,1) of SPI bus operations. The difference between the two modes, as shown in Figure 3, is the state of the SCK signal when the bus master is in Stand-by mode and no data is being transferred. The SCK signal is low for Mode 0 and SCK signal is high for Mode 3. For both modes, the Serial Data In (SI) is sampled at the rising edge of the SCK clock signal and the Serial Data Output (SO) is driven after the falling edge of the SCK clock signal.
DEVICE OPERATION
The SST25VF080B is accessed through the SPI (Serial Peripheral Interface) bus compatible protocol. The SPI bus consist of four control lines; Chip Enable (CE#) is used to
CE#
MODE 3 MODE 3 MODE 0
SCK SI SO
MODE 0
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
MSB
DON'T CARE Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
MSB
1296 SPIprot.0
HIGH IMPEDANCE
FIGURE 3: SPI Protocol
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
4
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet
Hold Operation
The HOLD# pin is used to pause a serial sequence underway with the SPI flash memory without resetting the clocking sequence. To activate the HOLD# mode, CE# must be in active low state. The HOLD# mode begins when the SCK active low state coincides with the falling edge of the HOLD# signal. The HOLD mode ends when the HOLD# signal's rising edge coincides with the SCK active low state. If the falling edge of the HOLD# signal does not coincide with the SCK active low state, then the device enters Hold mode when the SCK next reaches the active low state. Similarly, if the rising edge of the HOLD# signal does not coincide with the SCK active low state, then the device exits in Hold mode when the SCK next reaches the active low state. See Figure 4 for Hold Condition waveform. Once the device enters Hold mode, SO will be in highimpedance state while SI and SCK can be VIL or VIH. If CE# is driven active high during a Hold condition, it resets the internal logic of the device. As long as HOLD# signal is low, the memory remains in the Hold condition. To resume communication with the device, HOLD# must be driven active high, and CE# must be driven active low. See Figure 24 for Hold timing.
SCK
HOLD# Active Hold Active Hold Active
1296 HoldCond.0
FIGURE 4: Hold Condition Waveform
Write Protection
SST25VF080B provides software Write protection. The Write Protect pin (WP#) enables or disables the lock-down function of the status register. The Block-Protection bits (BP3, BP2, BP1, BP0, and BPL) in the status register provide Write protection to the memory array and the status register. See Table 4 for the Block-Protection description. Write Protect Pin (WP#) The Write Protect (WP#) pin enables the lock-down function of the BPL bit (bit 7) in the status register. When WP# is driven low, the execution of the Write-Status-Register (WRSR) instruction is determined by the value of the BPL bit (see Table 2). When WP# is high, the lock-down function of the BPL bit is disabled.
TABLE 2: Conditions to execute Write-StatusRegister (WRSR) Instruction
WP# L L H BPL 1 0 X Execute WRSR Instruction Not Allowed Allowed Allowed
T2.0 1296
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
5
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet
Status Register
The software status register provides status on whether the flash memory array is available for any Read or Write operation, whether the device is Write enabled, and the state of the Memory Write protection. During an internal Erase or TABLE 3: Software Status Register
Bit 0 1 2 3 4 5 6 Name BUSY WEL BP0 BP1 BP2 BP3 AAI Function 1 = Internal Write operation is in progress 0 = No internal Write operation is in progress 1 = Device is memory Write enabled 0 = Device is not memory Write enabled Indicate current level of block write protection (See Table 4) Indicate current level of block write protection (See Table 4) Indicate current level of block write protection (See Table 4) Indicate current level of block write protection (See Table 4) Auto Address Increment Programming status 1 = AAI programming mode 0 = Byte-Program mode 1 = BP3, BP2, BP1, BP0 are read-only bits 0 = BP3, BP2, BP1, BP0 are read/writable Default at Power-up 0 0 1 1 1 0 0 Read/Write R R R/W R/W R/W R/W R
Program operation, the status register may be read only to determine the completion of an operation in progress. Table 3 describes the function of each bit in the software status register.
7
BPL
0
R/W
T3.0 1296
Busy The Busy bit determines whether there is an internal Erase or Program operation in progress. A "1" for the Busy bit indicates the device is busy with an operation in progress. A "0" indicates the device is ready for the next valid operation. Write Enable Latch (WEL) The Write-Enable-Latch bit indicates the status of the internal memory Write Enable Latch. If the Write-Enable-Latch bit is set to "1", it indicates the device is Write enabled. If the bit is set to "0" (reset), it indicates the device is not Write enabled and does not accept any memory Write (Program/ Erase) commands. The Write-Enable-Latch bit is automatically reset under the following conditions: * * * * Power-up Write-Disable (WRDI) instruction completion Byte-Program instruction completion Auto Address Increment (AAI) programming is completed or reached its highest unprotected memory address Sector-Erase instruction completion Block-Erase instruction completion Chip-Erase instruction completion Write-Status-Register instructions
Auto Address Increment (AAI) The Auto Address Increment Programming-Status bit provides status on whether the device is in AAI programming mode or Byte-Program mode. The default at power up is Byte-Program mode.
* * * *
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
6
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet Block Protection (BP3,BP2, BP1, BP0) The Block-Protection (BP3, BP2, BP1, BP0) bits define the size of the memory area, as defined in Table 4, to be software protected against any memory Write (Program or Erase) operation. The Write-Status-Register (WRSR) instruction is used to program the BP3, BP2, BP1 and BP0 bits as long as WP# is high or the Block-Protect-Lock (BPL) bit is 0. Chip-Erase can only be executed if BlockProtection bits are all 0. After power-up, BP3, BP2, BP1 and BP0 are set to 1. Block Protection Lock-Down (BPL) WP# pin driven low (VIL), enables the Block-ProtectionLock-Down (BPL) bit. When BPL is set to 1, it prevents any further alteration of the BPL, BP3, BP2, BP1, and BP0 bits. When the WP# pin is driven high (VIH), the BPL bit has no effect and its value is "Don't Care". After power-up, the BPL bit is reset to 0.
TABLE 4: Software Status Register Block Protection for SST25VF080B1
Status Register Bit2 Protection Level None Upper 1/16 Upper 1/8 Upper 1/4 Upper 1/2 All Blocks All Blocks All Blocks BP3 X X X X X X X X BP2 0 0 0 0 1 1 1 1 BP1 0 0 1 1 0 0 1 1 BP0 0 1 0 1 0 1 0 1 Protected Memory Address 8 Mbit None F0000H-FFFFFH E0000H-FFFFFH C0000H-FFFFFH 80000H-FFFFFH 00000H-FFFFFH 00000H-FFFFFH 00000H-FFFFFH
T4.0 1296
1. X = Don't Care (RESERVED) default is "0 2. Default at power-up for BP2, BP1, and BP0 is `111'. (All Blocks Protected)
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
7
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet
Instructions
Instructions are used to read, write (Erase and Program), and configure the SST25VF080B. The instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. Prior to executing any Byte-Program, Auto Address Increment (AAI) programming, Sector-Erase, Block-Erase, Write-Status-Register, or Chip-Erase instructions, the Write-Enable (WREN) instruction must be executed first. The complete list of instructions is provided in Table 5. All instructions are synchronized off a high to low transition of CE#. Inputs will be accepted on the rising edge TABLE 5: Device Operation Instructions
Instruction Read High-Speed Read Description Read Memory at 25 MHz Read Memory at 50 MHz Op Code Cycle1 0000 0011b (03H) 0000 1011b (0BH) 0010 0000b (20H) 0101 0010b (52H) 1101 1000b (D8H) 0110 0000b (60H) or 1100 0111b (C7H) 0000 0010b (02H) 1010 1101b (ADH) 0000 0101b (05H) 0000 0001b (01H) 0000 0110b (06H) 0000 0100b (04H) 1001 0000b (90H) or 1010 1011b (ABH) 1001 1111b (9FH) Address Cycle(s)2 3 3 3 3 3 0 3 3 0 0 0 0 0 3 0 0 0 Dummy Data Maximum Cycle(s) Cycle(s) Frequency 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 to 1 to 0 0 0 0 1 2 to 1 to 0 1 0 0 1 to 3 to 0 0 25 MHz 66 MHz 66 MHz 66 MHz 66 MHz 66 MHz 66 MHz 66 MHz 66 MHz 66 MHz 66 MHz 66 MHz 66 MHz 66 MHz 66 MHz 66 MHz 66 MHz
T5.0 1296
of SCK starting with the most significant bit. CE# must be driven low before an instruction is entered and must be driven high after the last bit of the instruction has been shifted in (except for Read, Read-ID, and Read-StatusRegister instructions). Any low to high transition on CE#, before receiving the last bit of an instruction bus cycle, will terminate the instruction in progress and return the device to standby mode. Instruction commands (Op Code), addresses, and data are all input from the most significant bit (MSB) first.
4 KByte Sector-Erase3 Erase 4 KByte of memory array 32 KByte Block-Erase4 Erase 32 KByte block of memory array 64 KByte Block-Erase5 Erase 64 KByte block of memory array Chip-Erase Byte-Program AAI-Word-Program6 RDSR7 EWSR WRSR WREN WRDI RDID8 JEDEC-ID EBSY DBSY Erase Full Memory Array To Program One Data Byte Auto Address Increment Programming Read-Status-Register Write-Status-Register Write-Enable Write-Disable Read-ID JEDEC ID read
Enable-Write-Status-Register 0101b 0000b (50H)
Enable SO to output RY/BY# 0111 0000b (70H) status during AAI programming Disable SO to output RY/BY# 1000 0000b (80H) status during AAI programming
1. 2. 3. 4. 5. 6.
One bus cycle is eight clock periods. Address bits above the most significant bit of each density can be VIL or VIH. 4KByte Sector Erase addresses: use AMS-A12, remaining addresses are don't care but must be set either at VIL or VIH. 32KByte Block Erase addresses: use AMS-A15, remaining addresses are don't care but must be set either at VIL or VIH. 64KByte Block Erase addresses: use AMS-A16, remaining addresses are don't care but must be set either at VIL or VIH. To continue programming to the next sequential address location, enter the 8-bit command, ADH, followed by 2 bytes of data to be programmed. Data Byte 0 will be programmed into the initial address [A23-A1] with A0=0, Data Byte 1 will be programmed into the initial address [A23-A1] with A0=1. 7. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE#. 8. Manufacturer's ID is read with A0=0, and Device ID is read with A0=1. All other address bits are 00H. The Manufacturer's ID and device ID output stream is continuous until terminated by a low-to-high transition on CE#.
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
8
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet Read (25 MHz) The Read instruction, 03H, supports up to 25 MHz Read. The device outputs the data starting from the specified address location. The data output stream is continuous through all addresses until terminated by a low to high transition on CE#. The internal address pointer will automatically increment until the highest memory address is reached. Once the highest memory address is reached, the address pointer will automatically increment to the beginning (wrap-around) of the address space. Once the data from address location 1FFFFFH has been read, the next output will be from address location 000000H. The Read instruction is initiated by executing an 8-bit command, 03H, followed by address bits [A23-A0]. CE# must remain active low for the duration of the Read cycle. See Figure 5 for the Read sequence.
CE#
MODE 3
012345678
15 16
23 24
31 32
39 40
47
48
55 56
63 64
70
SCK
MODE 0
SI MSB SO
03
ADD. MSB
ADD.
ADD. N DOUT MSB
1296 ReadSeq_0.0
HIGH IMPEDANCE
N+1 DOUT
N+2 DOUT
N+3 DOUT
N+4 DOUT
FIGURE 5: Read Sequence
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
9
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet High-Speed-Read (66 MHz) The High-Speed-Read instruction supporting up to 66 MHz Read is initiated by executing an 8-bit command, 0BH, followed by address bits [A23-A0] and a dummy byte. CE# must remain active low for the duration of the High-SpeedRead cycle. See Figure 6 for the High-Speed-Read sequence. Following a dummy cycle, the High-Speed-Read instruction outputs the data starting from the specified address location. The data output stream is continuous through all addresses until terminated by a low to high transition on CE#. The internal address pointer will automatically increment until the highest memory address is reached. Once the highest memory address is reached, the address pointer will automatically increment to the beginning (wraparound) of the address space. Once the data from address location FFFFFH has been read, the next output will be from address location 00000H.
CE# MODE 3 SCK MODE 0 012345678 15 16 23 24 31 32 39 40 47 48 55 56 63 64 71 72 80
SI MSB SO
0B
ADD. MSB HIGH IMPEDANCE
ADD.
ADD.
X N DOUT MSB N+1 DOUT N+2 DOUT N+3 DOUT N+4 DOUT
1296 HSRdSeq.0
Note: X = Dummy Byte: 8 Clocks Input Dummy Cycle (VIL or VIH)
FIGURE 6: High-Speed-Read Sequence
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
10
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet Byte-Program The Byte-Program instruction programs the bits in the selected byte to the desired data. The selected byte must be in the erased state (FFH) when initiating a Program operation. A Byte-Program instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of the Byte-Program instruction. The ByteProgram instruction is initiated by executing an 8-bit command, 02H, followed by address bits [A23-A0]. Following the address, the data is input in order from MSB (bit 7) to LSB (bit 0). CE# must be driven high before the instruction is executed. The user may poll the Busy bit in the software status register or wait TBP for the completion of the internal self-timed Byte-Program operation. See Figure 7 for the Byte-Program sequence.
CE#
MODE 3
012345678
15 16
23 24
31 32
39
SCK
MODE 0
SI
MSB
02
ADD.
MSB
ADD.
ADD.
DIN MSB LSB
SO
HIGH IMPEDANCE
1296 ByteProg.0
FIGURE 7: Byte-Program Sequence
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
11
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet Auto Address Increment (AAI) Word-Program The AAI program instruction allows multiple bytes of data to be programmed without re-issuing the next sequential address location. This feature decreases total programming time when multiple bytes or entire memory array is to be programmed. An AAI Word program instruction pointing to a protected memory area will be ignored. The selected address range must be in the erased state (FFH) when initiating an AAI Word Program operation. While within AAI Word Programming sequence, the only valid instructions are AAI Word (ADH), RDSR (05H), or WRDI (04H). Users have three options to determine the completion of each AAI Word program cycle: hardware detection by reading the Serial Output, software detection by polling the BUSY bit in the software status register or wait TBP. Refer to EndOf-Write Detection section for details. Prior to any write operation, the Write-Enable (WREN) instruction must be executed. The AAI Word Program instruction is initiated by executing an 8-bit command, ADH, followed by address bits [A23-A0]. Following the addresses, two bytes of data is input sequentially, each one from MSB (Bit 7) to LSB (Bit 0). The first byte of data (D0) will be programmed into the initial address [A23-A1] with A0=0, the second byte of Data (D1) will be programmed into the initial address [A23-A1] with A0=1. CE# must be driven high before the AAI Word Program instruction is executed. The user must check the BUSY status before entering the next valid command. Once the device indicates it is no longer busy, data for the next two sequential addresses may be programmed and so on. When the last desired byte had been entered, check the busy status using the hardware method or the RDSR instruction and execute the Write-Disable (WRDI) instruction, 04H, to terminate AAI. User must check busy status after WRDI to determine if the device is ready for any command. See Figures 10 and 11 for AAI Word programming sequence. There is no wrap mode during AAI programming; once the highest unprotected memory address is reached, the device will exit AAI operation and reset the Write-EnableLatch bit (WEL = 0) and the AAI bit (AAI=0). End-of-Write Detection There are three methods to determine completion of a program cycle during AAI Word programming: hardware detection by reading the Serial Output, software detection by polling the BUSY bit in the Software Status Register or wait TBP. The hardware end-of-write detection method is described in the section below. Hardware End-of-Write Detection The hardware end-of-write detection method eliminates the overhead of polling the Busy bit in the Software Status Register during an AAI Word program operation. The 8-bit command, 70H, configures the Serial Output (SO) pin to indicate Flash Busy status during AAI Word programming. (see Figure 8) The 8-bit command, 70H, must be executed prior to executing an AAI Word-Program instruction. Once an internal programming operation begins, asserting CE# will immediately drive the status of the internal flash status on the SO pin. A "0" indicates the device is busy and a "1" indicates the device is ready for the next instruction. Deasserting CE# will return the SO pin to tri-state. The 8-bit command, 80H, disables the Serial Output (SO) pin to output busy status during AAI-Word-program operation and return SO pin to output Software Status Register data during AAI Word programming. (see Figure 9)
CE#
MODE 3
01234567
SCK
MODE 0
SI
MSB
70 HIGH IMPEDANCE
1296 EnableSO.0
SO
FIGURE 8: Enable SO as Hardware RY/BY# during AAI Programming
CE#
MODE 3
01234567
SCK
MODE 0
SI
MSB
80 HIGH IMPEDANCE
1296 DisableSO.0
SO
FIGURE 9: Disable SO as Hardware RY/BY# during AAI Programming
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
12
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet
CE#
0 78 15 16 23 24 31 32 39 40 47 48 0 78 15 16 23 24 0 78 15 16 23 24 0 7 0 78 15
MODE 3
SCK SI
MODE 0
AD
A
A
A
D0
D1
AD
D2
D3
AD
Dn-1 Last 2 Data Bytes
Dn
WRDI WDRI to exit AAI Mode
RDSR
Load AAI command, Address, 2 bytes data
2
SO
DOUT Wait TBP or poll Software Status register to load any command
Check for Flash Busy Status to load next valid1 command
Note:
1. Valid commands during AAI programming: AAI command or WRDI command 2. User must configure the SO pin to output Flash Busy status during AAI programming
1296 AAI.HW.0
FIGURE 10: Auto Address Increment (AAI) Word-Program Sequence with Hardware End-of-Write Detection
Wait TBP or poll Software Status register to load next valid1 command
CE#
0 78 15 16 23 24 31 32 39 40 47 48 0 78 15 16 23 24 0 78 15 16 23 24 0 7 0 78 15
MODE 3
SCK SI
MODE 0
AD
A
A
A
D0
D1
AD
D2
D3
AD
Dn-1 Last 2 Data Bytes
Dn
WRDI WDRI to exit AAI Mode
RDSR
Load AAI command, Address, 2 bytes data
SO
Note: 1. Valid commands during AAI programming: AAI command or WRDI command
DOUT Wait TBP or poll Software Status register to load any command
1296 AAI.SW.0
FIGURE 11: Auto Address Increment (AAI) Word-Program Sequence with Software End-of-Write Detection
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
13
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet 4-KByte Sector-Erase The Sector-Erase instruction clears all bits in the selected 4 KByte sector to FFH. A Sector-Erase instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any command sequence. The Sector-Erase instruction is initiated by executing an 8-bit command, 20H, followed by address bits [A23-A0]. Address bits [AMS-A12] (AMS = Most Significant address) are used to determine the sector address (SAX), remaining address bits can be VIL or VIH. CE# must be driven high before the instruction is executed. The user may poll the Busy bit in the software status register or wait TSE for the completion of the internal self-timed Sector-Erase cycle. See Figure 12 for the Sector-Erase sequence.
CE#
MODE 3
012345678
15 16
23 24
31
SCK
MODE 0
SI
MSB
20
ADD.
MSB
ADD.
ADD.
SO
HIGH IMPEDANCE
1296 SecErase.0
FIGURE 12: Sector-Erase Sequence
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
14
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet 32-KByte and 64-KByte Block-Erase The 32-KByte Block-Erase instruction clears all bits in the selected 32 KByte block to FFH. A Block-Erase instruction applied to a protected memory area will be ignored. The 64-KByte Block-Erase instruction clears all bits in the selected 64 KByte block to FFH. A Block-Erase instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any command sequence. The 32-Kbyte BlockErase instruction is initiated by executing an 8-bit command, 52H, followed by address bits [A23-A0]. Address bits [AMS-A15] (AMS = Most Significant Address) are used to determine block address (BAX), remaining address bits can be VIL or VIH. CE# must be driven high before the instruction is executed. The 64-Kbyte Block-Erase instruction is initiated by executing an 8-bit command D8H, followed by address bits [A23-A0]. Address bits [AMS-A15] are used to determine block address (BAX), remaining address bits can be VIL or VIH. CE# must be driven high before the instruction is executed. The user may poll the Busy bit in the software status register or wait TBE for the completion of the internal self-timed 32-KByte Block-Erase or 64-KByte Block-Erase cycles. See Figures 13 and 14 for the 32-KByte BlockErase and 64-KByte Block-Erase sequences.
CE#
MODE 3
012345678
15 16
23 24
31
SCK
MODE 0
SI
MSB
52
ADDR
MSB
ADDR
ADDR
SO
HIGH IMPEDANCE
1296 32KBklEr.0
FIGURE 13: 32-KByte Block-Erase Sequence
CE#
MODE 3
012345678
15 16
23 24
31
SCK
MODE 0
SI
MSB
D8
ADDR
MSB
ADDR
ADDR
SO
HIGH IMPEDANCE
1296 63KBlkEr.0
FIGURE 14: 64-KByte Block-Erase Sequence
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
15
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet Chip-Erase The Chip-Erase instruction clears all bits in the device to FFH. A Chip-Erase instruction will be ignored if any of the memory area is protected. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of the Chip-Erase instruction sequence. The Chip-Erase instruction is initiated by executing an 8-bit command, 60H or C7H. CE# must be driven high before the instruction is executed. The user may poll the Busy bit in the software status register or wait TCE for the completion of the internal self-timed Chip-Erase cycle. See Figure 15 for the Chip-Erase sequence.
CE#
MODE 3
01234567
SCK
MODE 0
SI
MSB
60 or C7 HIGH IMPEDANCE
1296 ChEr.0
SO
FIGURE 15: Chip-Erase Sequence Read-Status-Register (RDSR) The Read-Status-Register (RDSR) instruction allows reading of the status register. The status register may be read at any time even during a Write (Program/Erase) operation. When a Write operation is in progress, the Busy bit may be checked before sending any new commands to assure that the new commands are properly received by the device. CE# must be driven low before the RDSR instruction is entered and remain low until the status data is read. ReadStatus-Register is continuous with ongoing clock cycles until it is terminated by a low to high transition of the CE#. See Figure 16 for the RDSR instruction sequence.
CE#
MODE 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
SCK SI
MODE 0
05
MSB
SO
HIGH IMPEDANCE
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 MSB Status Register Out
1296 RDSRseq.0
FIGURE 16: Read-Status-Register (RDSR) Sequence
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
16
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet Write-Enable (WREN) The Write-Enable (WREN) instruction sets the WriteEnable-Latch bit in the Status Register to 1 allowing Write operations to occur. The WREN instruction must be executed prior to any Write (Program/Erase) operation. The WREN instruction may also be used to allow execution of the Write-Status-Register (WRSR) instruction; however, the Write-Enable-Latch bit in the Status Register will be cleared upon the rising edge CE# of the WRSR instruction. CE# must be driven high before the WREN instruction is executed.
CE#
MODE 3
01234567
SCK
MODE 0
SI
MSB
06 HIGH IMPEDANCE
1296 WREN.0
SO
FIGURE 17: Write Enable (WREN) Sequence Write-Disable (WRDI) The Write-Disable (WRDI) instruction resets the WriteEnable-Latch bit and AAI bit to 0 disabling any new Write operations from occurring. The WRDI instruction will not terminate any programming operation in progress. Any program operation in progress may continue up to TBP after executing the WRDI instruction. CE# must be driven high before the WRDI instruction is executed.
CE#
MODE 3
01234567
SCK
MODE 0
SI
MSB
04 HIGH IMPEDANCE
1296 WRDI.0
SO
FIGURE 18: Write Disable (WRDI) Sequence Enable-Write-Status-Register (EWSR) The Enable-Write-Status-Register (EWSR) instruction arms the Write-Status-Register (WRSR) instruction and opens the status register for alteration. The Write-StatusRegister instruction must be executed immediately after the execution of the Enable-Write-Status-Register instruction. This two-step instruction sequence of the EWSR instruction followed by the WRSR instruction works like SDP (software data protection) command structure which prevents any accidental alteration of the status register values. CE#
(c)2007 Silicon Storage Technology, Inc.
must be driven low before the EWSR instruction is entered and must be driven high before the EWSR instruction is executed.
S71296-02-000
06/07
17
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet Write-Status-Register (WRSR) The Write-Status-Register instruction writes new values to the BP3, BP2, BP1, BP0, and BPL bits of the status register. CE# must be driven low before the command sequence of the WRSR instruction is entered and driven high before the WRSR instruction is executed. See Figure 19 for EWSR or WREN and WRSR instruction sequences. Executing the Write-Status-Register instruction will be ignored when WP# is low and BPL bit is set to "1". When the WP# is low, the BPL bit can only be set from "0" to "1" to lock-down the status register, but cannot be reset from "1" to "0". When WP# is high, the lock-down function of the BPL bit is disabled and the BPL, BP0, and BP1 and BP2 bits in the status register can all be changed. As long as BPL bit is set to 0 or WP# pin is driven high (VIH) prior to the low-to-high transition of the CE# pin at the end of the WRSR instruction, the bits in the status register can all be altered by the WRSR instruction. In this case, a single WRSR instruction can set the BPL bit to "1" to lock down the status register as well as altering the BP0, BP1, and BP2 bits at the same time. See Table 2 for a summary description of WP# and BPL functions.
CE#
MODE 3
01234567
MODE 3 MODE 0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCK
MODE 0
SI MSB SO
50 or 06 MSB
01 HIGH IMPEDANCE
STATUS REGISTER IN 76543210 MSB
1296 EWSR.0
FIGURE 19: Enable-Write-Status-Register (EWSR) or Write-Enable (WREN) and Write-Status-Register (WRSR) Sequence
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
18
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet JEDEC Read-ID The JEDEC Read-ID instruction identifies the device as SST25VF080B and the manufacturer as SST. The device information can be read from executing the 8-bit command, 9FH. Following the JEDEC Read-ID instruction, the 8-bit manufacturer's ID, BFH, is output from the device. After that, a 16-bit device ID is shifted out on the SO pin. Byte 1, BFH, identifies the manufacturer as SST. Byte 2, 25H, identifies the memory type as SPI Serial Flash. Byte 3, 8EH, identifies the device as SST25VF080B. The instruction sequence is shown in Figure 20. The JEDEC Read ID instruction is terminated by a low to high transition on CE# at any time during data output.
CE#
MODE 3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
SCK
MODE 0
SI HIGH IMPEDANCE
9F
SO
BF
MSB MSB
25
8E
1296 JEDECID.1
FIGURE 20: JEDEC Read-ID Sequence TABLE 6: JEDEC Read-ID Data
Manufacturer's ID Byte1 BFH Byte 2 25H Device ID Memory Type Memory Capacity Byte 3 8EH
T6.0 1296
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
19
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet Read-ID (RDID) The Read-ID instruction (RDID) identifies the devices as SST25VF080B and manufacturer as SST. This command is backward compatible to all SST25xFxxxA devices and should be used as default device identification when multiple versions of SPI Serial Flash devices are used in a design. The device information can be read from executing an 8-bit command, 90H or ABH, followed by address bits [A23-A0]. Following the Read-ID instruction, the manufacturer's ID is located in address 00000H and the device ID is located in address 00001H. Once the device is in Read-ID mode, the manufacturer's and device ID output data toggles between address 00000H and 00001H until terminated by a low to high transition on CE#. Refer to Tables 6 and 7 for device identification data.
CE#
MODE 3
012345678
15 16
23 24
31 32
39 40
47 48
55 56
63
SCK
MODE 0
SI
MSB
90 or AB
00
00
ADD1
MSB
SO
HIGH IMPEDANCE
MSB
BF
Device ID
BF
Device ID
HIGH IMPEDANCE
Note: The manufacturer's and device ID output stream is continuous until terminated by a low to high transition on CE#. Device ID = 8EH for SST25VF080B 1. 00H will output the manfacturer's ID first and 01H will output device ID first before toggling between the two.
1265 RdID.0
FIGURE 21: Read-ID Sequence TABLE 7: Product Identification
Address Manufacturer's ID Device ID SST25VF080B 00001H 8EH
T7.0 1296
Data BFH
00000H
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
20
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55C to +125C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V Package Power Dissipation Capability (TA = 25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
Operating Range
Range Commercial Industrial Ambient Temp 0C to +70C -40C to +85C VDD 2.7-3.6V 2.7-3.6V
AC Conditions of Test
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns Output Load . . . . . . . . . . . . . . . . . . . . . CL = 30 pF See Figures 26 and 27
TABLE 8: DC Operating Characteristics
Limits Symbol IDDR IDDR2 IDDW ISB ILI ILO VIL VIH VOL VOL2 VOH Parameter Read Current Read Current Program and Erase Current Standby Current Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output Low Voltage Output High Voltage VDD-0.2 0.7 VDD 0.2 0.4 Min Max 10 15 30 20 1 1 0.8 Units mA mA mA A A A V V V V V Test Conditions CE#=0.1 VDD/0.9 VDD@25 MHz, SO=open CE#=0.1 VDD/0.9 VDD@50 MHz, SO=open CE#=VDD CE#=VDD, VIN=VDD or VSS VIN=GND to VDD, VDD=VDD Max VOUT=GND to VDD, VDD=VDD Max VDD=VDD Min VDD=VDD Max IOL=100 A, VDD=VDD Min IOL=1.6 mA, VDD=VDD Min IOH=-100 A, VDD=VDD Min
T8.0 1296
TABLE 9: Recommended System Power-up Timings
Symbol TPU-READ1 TPU-WRITE
1
Parameter VDD Min to Read Operation VDD Min to Write Operation
Minimum 10 10
Units s s
T9.0 1296
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
21
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet TABLE 10: Capacitance (TA = 25C, f=1 Mhz, other pins open)
Parameter COUT1 CIN
1
Description Output Pin Capacitance Input Capacitance
Test Condition VOUT = 0V VIN = 0V
Maximum 12 pF 6 pF
T10.0 1296
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: Reliability Characteristics
Symbol NEND TDR1 ILTH1
1
Parameter Endurance Data Retention Latch Up
Minimum Specification 10,000 100 100 + IDD
Units Cycles Years mA
Test Method JEDEC Standard A117 JEDEC Standard A103 JEDEC Standard 78
T11.0 1296
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 12: AC Operating Characteristics
25 MHz Symbol FCLK3 TSCKH TSCKL TSCKR4 TSCKF TCES5 TCEH5 TCHS5 TCHH5 TCPH TCHZ TCLZ TDS TDH THLS THHS THLH THHH THZ TLZ TOH TV TSE TBE TSCE TBP
1. 2. 3. 4. 5.
50 MHz Min 9 9 0.1 0.1 5 5 5 5 50 15 8 0 2 5 5 5 5 5 20 15 8 8 0 15 25 25 50 10 8 25 25 50 10 Max 50 25
66 MHz1,2 Min 7 7 0.1 0.1 4 4 4 4 100 6 0 2 3 4 4 4 4 8 8 0 6 25 25 50 10 Max 66 Units MHz ns ns V/ns V/ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms ms s
T12.0 1296
Parameter Serial Clock Frequency Serial Clock High Time Serial Clock Low Time Serial Clock Rise Time (Slew Rate) Serial Clock Fall Time (Slew Rate) CE# Active Setup Time CE# Active Hold Time CE# Not Active Setup Time CE# Not Active Hold Time CE# High Time CE# High to High-Z Output SCK Low to Low-Z Output Data In Setup Time Data In Hold Time HOLD# Low Setup Time HOLD# High Setup Time HOLD# Low Hold Time HOLD# High Hold Time HOLD# Low to High-Z Output HOLD# High to Low-Z Output Output Hold from SCK Change Output Valid from SCK Sector-Erase Block-Erase Chip-Erase Byte-Program
Min 18 18 0.1 0.1 10 10 10 10 100 0 5 5 10 10 10 10
Max
0
VDD = 3.0 - 3.6 V, CL = 15 pF Characterized, but not fully tested Maximum clock frequency for Read Instruction, 03H, is 25 MHz Maximum Rise and Fall time may be limited by TSCKH and TSCKL requirements Relative to SCK.
S71296-02-000 06/07
(c)2007 Silicon Storage Technology, Inc.
22
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet
TCPH CE# TCHH SCK TDS SI TDH TSCKR LSB TCES TSCKF TCEH TCHS
MSB
SO
HIGH-Z
HIGH-Z
1296 SerIn.0
FIGURE 22: Serial Input Timing Diagram
CE# TSCKH SCK TCLZ SO TV SI
1296 SerOut.0
TSCKL
TOH MSB LSB
TCHZ
FIGURE 23: Serial Output Timing Diagram
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
23
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet
CE# THHH SCK THLH THZ SO TLZ THLS THHS
SI
HOLD#
1296 Hold.0
FIGURE 24: Hold Timing Diagram
VDD VDD Max Chip selection is not allowed. Commands may not be accepted or properly interpreted by the device.
VDD Min
TPU-READ TPU-WRITE
Device fully accessible
Time
1296 PwrUp.0
FIGURE 25: Power-up Timing Diagram
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
24
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet
VIHT VHT
INPUT REFERENCE POINTS
VHT
OUTPUT
VILT
VLT
VLT
1296 IORef.0
AC test inputs are driven at VIHT (0.9VDD) for a logic "1" and VILT (0.1VDD) for a logic "0". Measurement reference points for inputs and outputs are VHT (0.6VDD) and VLT (0.4VDD). Input rise and fall times (10% 90%) are <5 ns.
Note: VHT - VHIGH Test VLT - VLOW Test VIHT - VINPUT HIGH Test VILT - VINPUT LOW Test
FIGURE 26: AC Input/Output Reference Waveforms
TO TESTER
TO DUT CL
1296 TstLd.0
FIGURE 27: A Test Load Example
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
25
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet
PRODUCT ORDERING INFORMATION
SST 25 XX VF XX 080 B XXX X 50 XX - 4C - XX S2A F XXX X Environmental Attribute F1 = non-Pb / non-Sn contact (lead) finish: Nickel plating with Gold top (outer) layer Package Modifier A = 8 leads or contacts Package Type S2 = SOIC 200 mil body width Q = WSON Temperature Range C = Commercial = 0C to +70C I = Industrial = -40C to +85C Minimum Endurance 4 = 10,000 cycles Operating Frequency 50 = 50 MHz Device Density 080 = 8 Mbit Voltage V = 2.7-3.6V Product Series 25 = Serial Peripheral Interface flash memory
1. Environmental suffix "F" denotes non-Pb/non-SN solder. SST non-Pb/non-Sn solder devices are "RoHS Compliant".
Valid Combinations for SST25VF080B SST25VF080B-50-4C-S2AF SST25VF080B-50-4I-S2AF SST25VF080B-50-4C-QAF SST25VF080B-50-4I-QAF
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations.
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
26
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet
PACKAGING DIAGRAMS
Pin #1 Identifier
TOP VIEW
SIDE VIEW
5.40 5.15 1.27 BSC
0.50 0.35
5.40 5.15 8.10 7.70 2.16 1.75 0.25 0.19
0.25 0.05
END VIEW
0 8
08-soic-EIAJ-S2A-3
Note: 1. All linear dimensions are in millimeters (max/min). 2. Coplanarity: 0.1 mm 3. Maximum allowable mold flash is 0.15 mm at the package ends and 0.25 mm between leads.
0.80 0.50
1mm
FIGURE 28: 8-lead Small Outline Integrated Circuit (SOIC) 200 mil body width (5.2mm x 8mm) SST Package Code: S2A
(c)2007 Silicon Storage Technology, Inc.
S71296-02-000
06/07
27
8 Mbit SPI Serial Flash SST25VF080B
Data Sheet
TOP VIEW
Pin #1 Corner
SIDE VIEW
0.2
BOTTOM VIEW
Pin #1
1.27 BSC
5.00 0.10
0.076
4.0 3.4
0.48 0.35
6.00 0.10 0.80 0.70
Note: 1. All linear dimensions are in millimeters (max/min). 2. Untoleranced dimensions (shown with box surround) are nominal target dimensions. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device.
0.05 Max
0.70 0.50
CROSS SECTION
0.80 0.70
1mm 8-wson-5x6-QA-9.0
FIGURE 29: 8-contact Very-very-thin Small Outline No-lead (WSON) SST Package Code: QA
TABLE 13: Revision History
Number 00 01 02 Description Date Sep 2005 Jan 2006 Jun 2007
* * * * * * *
Initial release of data sheet Migrated document to a Data Sheet Updated Surface Mount Solder Reflow Temperature information Updated Features Updated Table 5 on page 8 Updated "High-Speed-Read (66 MHz)" on page 10 Updated Table 12 on page 22
Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com
(c)2007 Silicon Storage Technology, Inc. S71296-02-000 06/07
28

▲Up To Search▲

Price & Availability of SST25VF080B07

	To Download SST25VF080B07 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .